NDLI: Process transfer from conventional RIE to transformer-coupled high density plasma metal etch system

Content Provider	IEEE Xplore Digital Library
Author	Christie, R. Johnston, S. Kutchmarik, D. Barlow, J.
Copyright Year	1994
Description	Author affiliation: Adv. Semicond. Technol. Center, IBM Microelectro., Hopewell Junction, NY, USA (Christie, R.)
Abstract	One of the most challenging processes in semiconductor manufacturing is the dry etching of aluminum alloys in plasma. The requirements include: anisotropy, high selectivity to photoresist, control of critical dimensions, residue free etching, and minimal pattern sensitivity. Along with these requirements, a post etch treatment is needed to prevent the onset of corrosion. In a manufacturing environment, high throughput, minimal down time, and low cost of ownership are essential. IBMs Advanced Semiconductor Technology Center (ASTC) was a beta site for the LAM 9600 metal etch tool. Plasma enhancement, in this system, is achieved using TCP (transformer coupled plasma). With TCP, a high density plasma is generated in a wide pressure range (5 to 100 mTorr) allowing for improved process capabilities. Post etch treatment, on the 9600 system, consists of two parts: a photoresist stripper module and a atmospheric passivation module. This paper will discuss the LAM/IBM ASTC beta site tool install, debug, and process transfer/qualification experience. Electrical data, critical dimensions, particle performance, etch rates, uniformities, selectivities, etch profiles, and tool availability will be compared to the LAM 4608 system.
Starting Page	34
Ending Page	36
File Size	299041
Page Count	3
File Format	PDF
ISBN	0780320530
DOI	10.1109/ASMC.1994.588171
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1994-11-26
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Plasma applications Plasma materials processing Plasma density Semiconductor device manufacture Resists Manufacturing processes Dry etching Aluminum alloys Anisotropic magnetoresistance Corrosion
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Libarray of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Metal etch with HI-addition to conventional chemistry

Sub-quarter-micron Al etching technology using SiON hard mask in transformer coupled plasma (TCP) etcher

An integrated hardmask/poly RIE process for sub-0.25 um gate etch

Metal corrosion and passivation swelling defect study of ultra low pattern density thick metal etch process

Plasma Etch Process Diagnosis and Control By Wireless Sensor Wafer in Semiconductor Chip Manufacturing

Dry Processes for Patterning

Using neural networks to control the process of plasma etching and deposition

Dry etching process in InP Gunn device technology utilizing inductively coupled plasma (ICP) system

High rate anisotropic etching

Process transfer from conventional RIE to transformer-coupled high density plasma metal etch system

Similar Documents

Metal etch with HI-addition to conventional chemistry

Sub-quarter-micron Al etching technology using SiON hard mask in transformer coupled plasma (TCP) etcher

An integrated hardmask/poly RIE process for sub-0.25 um gate etch

Metal corrosion and passivation swelling defect study of ultra low pattern density thick metal etch process

Plasma Etch Process Diagnosis and Control By Wireless Sensor Wafer in Semiconductor Chip Manufacturing

Dry Processes for Patterning

Using neural networks to control the process of plasma etching and deposition

Dry etching process in InP Gunn device technology utilizing inductively coupled plasma (ICP) system

High rate anisotropic etching

Process transfer from conventional RIE to transformer-coupled high density plasma metal etch system